IRFHS8342 MOSFET
Specifications of IRFHS8342 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 16 mΩ
- Continuous Drain Current: 19 A
- Total Gate Charge: 4.2 nC
- Power Dissipation: 0 W
- Package: PQFN 2 X 2
Pinout of IRFHS8342
