IRFHM831 MOSFET
Specifications of IRFHM831 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 7.8 mΩ
- Continuous Drain Current: 47 A
- Total Gate Charge: 7.3 nC
- Power Dissipation: 27 W
- Package: PQFN 3.3 X 3.3
Pinout of IRFHM831
