IRFHM830 MOSFET
Specifications of IRFHM830 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3.8 mΩ
- Continuous Drain Current: 40 A
- Total Gate Charge: 31 nC
- Power Dissipation: 37 W
- Package: PQFN 3.3 X 3.3
Pinout of IRFHM830
