IRFH7110 MOSFET
Specifications of IRFH7110 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 13.5 mΩ
- Continuous Drain Current: 58 A
- Total Gate Charge: 58 nC
- Power Dissipation: 104 W
- Package: PQFN 5 X 6 E
Pinout of IRFH7110
