IRFH6200 MOSFET
Specifications of IRFH6200 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 20 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 1.2 mΩ
- Continuous Drain Current: 100 A
- Total Gate Charge: 155 nC
- Power Dissipation: 250 W
- Package: PQFN 5 X 6 B
Pinout of IRFH6200
