IRFH5302D MOSFET

Specifications of IRFH5302D MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 2.5 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 26 nC
  • Power Dissipation: 0 W
  • Package: PQFN 5 X 6 B

Pinout of IRFH5302D

IRFH5302D pinout

Replacement and Equivalent of IRFH5302D Transistor

You can replace the IRFH5302D with the IRFH5300, IRFH5301, IRFH5302, IRFH7004