IRFH5220 MOSFET
Specifications of IRFH5220 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 99.9 mΩ
- Continuous Drain Current: 20 A
- Total Gate Charge: 20 nC
- Power Dissipation: 0 W
- Package: PQFN 5 X 6 B
Pinout of IRFH5220
