IRFH5015 MOSFET
Specifications of IRFH5015 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 31 mΩ
- Continuous Drain Current: 56 A
- Total Gate Charge: 33 nC
- Power Dissipation: 250 W
- Package: PQFN 5 X 6 B
Pinout of IRFH5015
