IRFBA90N20D MOSFET
Specifications of IRFBA90N20D MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 23 mΩ
- Continuous Drain Current: 98 A
- Total Gate Charge: 160 nC
- Power Dissipation: 650 W
- Package: SUPER 220 (TO-273AA)
Pinout of IRFBA90N20D
