IRFBA1405P MOSFET
Specifications of IRFBA1405P MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 5 mΩ
- Continuous Drain Current: 174 A
- Total Gate Charge: 170 nC
- Power Dissipation: 330 W
- Package: SUPER 220 (TO-273AA)
Pinout of IRFBA1405P
