IRFBA1404P MOSFET
Specifications of IRFBA1404P MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 40 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3.7 mΩ
- Continuous Drain Current: 206 A
- Total Gate Charge: 160 nC
- Power Dissipation: 300 W
- Package: SUPER 220 (TO-273AA)
Pinout of IRFBA1404P
