IRF8327S MOSFET

Specifications of IRF8327S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 30 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 7.3 mΩ
  • Continuous Drain Current: 60 A
  • Total Gate Charge: 9.2 nC
  • Power Dissipation: 42 W
  • Package: DIRECTFET SQ

Pinout of IRF8327S

IRF8327S pinout

Replacement and Equivalent of IRF8327S Transistor

You can replace the IRF8327S with the IRF6721S