IRF8010L MOSFET

Specifications of IRF8010L MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 100 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 15 mΩ
  • Continuous Drain Current: 80 A
  • Total Gate Charge: 81 nC
  • Power Dissipation: 260 W
  • Package: TO-262

Pinout of IRF8010L

IRF8010L pinout

Replacement and Equivalent of IRF8010L Transistor

You can replace the IRF8010L with the IRFSL4010, IRFSL4115, IRFSL4310, IRFSL4321