IRF7799L2 MOSFET
Specifications of IRF7799L2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 250 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 38 mΩ
- Continuous Drain Current: 35 A
- Total Gate Charge: 110 nC
- Power Dissipation: 125 W
- Package: DIRECTFET L8
Pinout of IRF7799L2
