IRF7779L2 MOSFET
Specifications of IRF7779L2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 11 mΩ
- Continuous Drain Current: 67 A
- Total Gate Charge: 97 nC
- Power Dissipation: 125 W
- Package: DIRECTFET L8
Pinout of IRF7779L2
