IRF7759L2 MOSFET
Specifications of IRF7759L2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 75 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.3 mΩ
- Continuous Drain Current: 160 A
- Total Gate Charge: 200 nC
- Power Dissipation: 125 W
- Package: DIRECTFET L8
Pinout of IRF7759L2
