IRF7665S2 MOSFET
Specifications of IRF7665S2 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 62 mΩ
- Continuous Drain Current: 14.4 A
- Total Gate Charge: 8.3 nC
- Power Dissipation: 30 W
- Package: DIRECTFET SB
Pinout of IRF7665S2
