IRF7478Q MOSFET
Specifications of IRF7478Q MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 26 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 21 nC
- Power Dissipation: 0 W
- Package: SO-8
Pinout of IRF7478Q
![IRF7478Q pinout](/images/mosfet/irf7478q-pinout.jpg)