IRF7452Q MOSFET
Specifications of IRF7452Q MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 100 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 60 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 33 nC
- Power Dissipation: 0 W
- Package: SO-8