IRF6892S MOSFET
Specifications of IRF6892S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 25 V
- Gate-to-Source Voltage, max: ±16 V
- Drain-Source On-State Resistance, max: 1.7 mΩ
- Continuous Drain Current: 125 A
- Total Gate Charge: 17 nC
- Power Dissipation: 42 W
- Package: DIRECTFET S3C
Pinout of IRF6892S
