IRF6811S MOSFET

Specifications of IRF6811S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±16 V
  • Drain-Source On-State Resistance, max: 3.7 mΩ
  • Continuous Drain Current: 74 A
  • Total Gate Charge: 11 nC
  • Power Dissipation: 32 W
  • Package: DIRECTFET SQ

Pinout of IRF6811S

IRF6811S pinout

Replacement and Equivalent of IRF6811S Transistor

You can replace the IRF6811S with the IRF6713S