IRF6810S MOSFET

Specifications of IRF6810S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±16 V
  • Drain-Source On-State Resistance, max: 5.2 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 7.4 nC
  • Power Dissipation: 20 W
  • Package: DIRECTFET S1

Pinout of IRF6810S

IRF6810S pinout

Replacement and Equivalent of IRF6810S Transistor

You can replace the IRF6810S with the IRF6706S2