IRF6712S MOSFET

Specifications of IRF6712S MOSFET

  • Type: n-channel
  • Drain-to-Source Breakdown Voltage: 25 V
  • Gate-to-Source Voltage, max: ±20 V
  • Drain-Source On-State Resistance, max: 4.9 mΩ
  • Continuous Drain Current: 0 A
  • Total Gate Charge: 13 nC
  • Power Dissipation: 36 W
  • Package: DIRECTFET SQ

Pinout of IRF6712S

IRF6712S pinout

Replacement and Equivalent of IRF6712S Transistor

You can replace the IRF6712S with the IRF6711S, IRF6713S