IRF6668 MOSFET
Specifications of IRF6668 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 80 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 15 mΩ
- Continuous Drain Current: 55 A
- Total Gate Charge: 22 nC
- Power Dissipation: 89 W
- Package: DIRECTFET MZ
Pinout of IRF6668
