IRF6604 MOSFET
Specifications of IRF6604 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 11.5 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 20 nC
- Power Dissipation: 42 W
- Package: DIRECTFET MQ
Pinout of IRF6604
