IRF6201 MOSFET
Specifications of IRF6201 MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 20 V
- Gate-to-Source Voltage, max: ±12 V
- Drain-Source On-State Resistance, max: 2.45 mΩ
- Continuous Drain Current: 0 A
- Total Gate Charge: 130 nC
- Power Dissipation: 0 W
- Package: SO-8
Pinout of IRF6201
