IRF3515S MOSFET
Specifications of IRF3515S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 150 V
- Gate-to-Source Voltage, max: ±30 V
- Drain-Source On-State Resistance, max: 45 mΩ
- Continuous Drain Current: 41 A
- Total Gate Charge: 71.3 nC
- Power Dissipation: 200 W
- Package: D2-PAK