IRF1503S MOSFET
Specifications of IRF1503S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 3.3 mΩ
- Continuous Drain Current: 190 A
- Total Gate Charge: 130 nC
- Power Dissipation: 200 W
- Package: D2-PAK