IRF1405ZS-7P MOSFET
Specifications of IRF1405ZS-7P MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 4.9 mΩ
- Continuous Drain Current: 150 A
- Total Gate Charge: 150 nC
- Power Dissipation: 230 W
- Package: D2-PAK 7-LEAD