IRF1405S MOSFET
Specifications of IRF1405S MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 55 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 5.3 mΩ
- Continuous Drain Current: 131 A
- Total Gate Charge: 170 nC
- Power Dissipation: 200 W
- Package: D2-PAK
Pinout of IRF1405S
![IRF1405S pinout](/images/mosfet/irf1405s-pinout.jpg)