IRF1018E MOSFET
Specifications of IRF1018E MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 8.4 mΩ
- Continuous Drain Current: 79 A
- Total Gate Charge: 46 nC
- Power Dissipation: 110 W
- Package: TO-220AB
Pinout of IRF1018E
Replacement and Equivalent of IRF1018E Transistor
You can replace the IRF1018E with the
IRF1407,
IRF1607,
IRF2907Z,
IRF3808,
IRFB3006,
IRFB3006G,
IRFB3077,
IRFB3077G,
IRFB3206,
IRFB3206G,
IRFB3207,
IRFB3207Z,
IRFB3207ZG,
IRFB3256,
IRFB3306,
IRFB3306G,
IRFB3307,
IRFB3307Z,
IRFB3307ZG,
IRFB4110,
IRFB4110G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG
