IRF1010E MOSFET
Specifications of IRF1010E MOSFET
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 60 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 12 mΩ
- Continuous Drain Current: 81 A
- Total Gate Charge: 86.6 nC
- Power Dissipation: 170 W
- Package: TO-220AB
Pinout of IRF1010E
Replacement and Equivalent of IRF1010E Transistor
You can replace the IRF1010E with the
IRF1407,
IRF1607,
IRF2807Z,
IRF2907Z,
IRF3808,
IRFB3006,
IRFB3006G,
IRFB3077,
IRFB3077G,
IRFB3206,
IRFB3206G,
IRFB3207,
IRFB3207Z,
IRFB3207ZG,
IRFB3256,
IRFB3306,
IRFB3306G,
IRFB3307,
IRFB3307Z,
IRFB3307ZG,
IRFB4110,
IRFB4110G,
IRFB4115,
IRFB4115G,
IRFB4310,
IRFB4310G,
IRFB4310Z,
IRFB4310ZG,
IRFB4410,
IRFB4410Z,
IRFB4410ZG
