TTC0001 Bipolar Transistor
Characteristics of TTC0001 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 160 V
- Collector-Base Voltage, max: 160 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 18 A
- Collector Dissipation: 150 W
- DC Current Gain (hfe): 80 to 160
- Transition Frequency, min: 30 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of TTC0001
Complementary PNP transistor
Replacement and Equivalent for TTC0001 transistor
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