PBHV8540Z Bipolar Transistor

Characteristics of PBHV8540Z Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.7 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-223

Pinout of PBHV8540Z

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV8540Z transistor is marked as "V8540Z".

Complementary PNP transistor

The complementary PNP transistor to the PBHV8540Z is the PBHV9040Z.
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