PBHV8540X Bipolar Transistor

Characteristics of PBHV8540X Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.52 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-89

Pinout of PBHV8540X

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV8540X transistor is marked as "4D".

Complementary PNP transistor

The complementary PNP transistor to the PBHV8540X is the PBHV9040X.
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