PBHV8540T Bipolar Transistor

Characteristics of PBHV8540T Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.3 W
  • DC Current Gain (hfe): 100
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-23

Pinout of PBHV8540T

Here is an image showing the pin diagram of this transistor.

Marking

The PBHV8540T transistor is marked as "W4".

Complementary PNP transistor

The complementary PNP transistor to the PBHV8540T is the PBHV9040T.

Replacement and Equivalent for PBHV8540T transistor

You can replace the PBHV8540T with the STR1550.
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