NTE396 Bipolar Transistor

Characteristics of NTE396 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 450 V
  • Emitter-Base Voltage, max: 7 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 5 W
  • DC Current Gain (hfe): 40 to 160
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-39

Pinout of NTE396

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE396 is the NTE397.

Replacement and Equivalent for NTE396 transistor

You can replace the NTE396 with the 2N3439.
If you find an error please send an email to mail@el-component.com