NTE396 Bipolar Transistor
Characteristics of NTE396 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 350 V
- Collector-Base Voltage, max: 450 V
- Emitter-Base Voltage, max: 7 V
- Collector Current − Continuous, max: 1 A
- Collector Dissipation: 5 W
- DC Current Gain (hfe): 40 to 160
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -65 to +200 °C
- Package: TO-39
Pinout of NTE396
Complementary PNP transistor
Replacement and Equivalent for NTE396 transistor
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