NTE392 Bipolar Transistor

Characteristics of NTE392 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 25 A
  • Collector Dissipation: 125 W
  • DC Current Gain (hfe): 15 to 75
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3P

Pinout of NTE392

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE392 is the NTE393.

Replacement and Equivalent for NTE392 transistor

You can replace the NTE392 with the TIP35C, TIP35CA or TIP35CG.
If you find an error please send an email to mail@el-component.com