NTE199 Bipolar Transistor
Characteristics of NTE199 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 50 V
- Collector-Base Voltage, max: 70 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 0.1 A
- Collector Dissipation: 0.36 W
- DC Current Gain (hfe): 400 to 1200
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
Pinout of NTE199
Here is an image showing the pin diagram of this transistor.
Replacement and Equivalent for NTE199 transistor
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