NTE191 Bipolar Transistor
Characteristics of NTE191 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 300 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 45 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-202
Pinout of NTE191
Complementary PNP transistor
SMD Version of NTE191 transistor
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