NTE191 Bipolar Transistor

Characteristics of NTE191 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 300 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 40
  • Transition Frequency, min: 45 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-202

Pinout of NTE191

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the NTE191 is the NTE240.

SMD Version of NTE191 transistor

The KST42 (SOT-23), MMBTA42 (SOT-23) and PZTA42 (SOT-223) is the SMD version of the NTE191 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.
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