MPSW42G Bipolar Transistor
Characteristics of MPSW42G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 300 V
- Collector-Base Voltage, max: 300 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 1 W
- DC Current Gain (hfe): 40
- Transition Frequency, min: 50 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- The MPSW42G is the lead-free version of the MPSW42 transistor
Pinout of MPSW42G
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
SMD Version of MPSW42G transistor
Replacement and Equivalent for MPSW42G transistor
If you find an error please send an email to mail@el-component.com