MPSA29G Bipolar Transistor
Characteristics of MPSA29G Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 12 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.625 W
- DC Current Gain (hfe): 10000
- Transition Frequency, min: 200 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-92
- The MPSA29G is the lead-free version of the MPSA29 transistor
Pinout of MPSA29G
Here is an image showing the pin diagram of this transistor.
Replacement and Equivalent for MPSA29G transistor
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