MPSA29G Bipolar Transistor

Characteristics of MPSA29G Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 100 V
  • Collector-Base Voltage, max: 100 V
  • Emitter-Base Voltage, max: 12 V
  • Collector Current − Continuous, max: 0.5 A
  • Collector Dissipation: 0.625 W
  • DC Current Gain (hfe): 10000
  • Transition Frequency, min: 200 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-92
  • The MPSA29G is the lead-free version of the MPSA29 transistor

Pinout of MPSA29G

The MPSA29G is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for MPSA29G transistor

You can replace the MPSA29G with the MPSA29.
If you find an error please send an email to mail@el-component.com