MMBT6429 Bipolar Transistor
Characteristics of MMBT6429 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 45 V
- Collector-Base Voltage, max: 55 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 0.2 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 500 to 1250
- Transition Frequency, min: 100 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of MMBT6429
Replacement and Equivalent for MMBT6429 transistor
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