MMBT6427 Bipolar Transistor
Characteristics of MMBT6427 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 40 V
- Collector-Base Voltage, max: 40 V
- Emitter-Base Voltage, max: 12 V
- Collector Current − Continuous, max: 0.5 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 20000 to 200000
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
Pinout of MMBT6427
Replacement and Equivalent for MMBT6427 transistor
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