MMBT5088 Bipolar Transistor
Characteristics of MMBT5088 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 30 V
- Collector-Base Voltage, max: 35 V
- Emitter-Base Voltage, max: 3 V
- Collector Current − Continuous, max: 0.05 A
- Collector Dissipation: 0.35 W
- DC Current Gain (hfe): 300 to 900
- Transition Frequency, min: 50 MHz
- Noise Figure, max: 3 dB
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: SOT-23
- These Devices are Pb-Free and are RoHS Compliant
Pinout of MMBT5088
Marking
Replacement and Equivalent for MMBT5088 transistor
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