MMBT3906T Bipolar Transistor

Characteristics of MMBT3906T Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -40 V
  • Collector-Base Voltage, max: -40 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.2 A
  • Collector Dissipation: 0.25 W
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency, min: 250 MHz
  • Noise Figure, max: 4 dB
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: SOT-523F

Pinout of MMBT3906T

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the MMBT3906T is the MMBT3904T.
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