MJE13003B Bipolar Transistor

Characteristics of MJE13003B Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 700 V
  • Emitter-Base Voltage, max: 9 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 1 W
  • DC Current Gain (hfe): 10 to 30
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-92

Pinout of MJE13003B

The MJE13003B is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, collector, and base leads.
Here is an image showing the pin diagram of this transistor.
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