MJE1291 Bipolar Transistor
Characteristics of MJE1291 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -60 V
- Collector-Base Voltage, max: -60 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -15 A
- Collector Dissipation: 90 W
- DC Current Gain (hfe): 20 to 100
- Transition Frequency, min: 3 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-127
Pinout of MJE1291
Complementary NPN transistor
If you find an error please send an email to mail@el-component.com