MJE1093 Bipolar Transistor
Characteristics of MJE1093 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -80 V
- Collector-Base Voltage, max: -80 V
- Emitter-Base Voltage, max: -5 V
- Collector Current − Continuous, max: -5 A
- Collector Dissipation: 70 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-127
Pinout of MJE1093
Complementary NPN transistor
Replacement and Equivalent for MJE1093 transistor
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