MJD350-1 Bipolar Transistor

Characteristics of MJD350-1 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -300 V
  • Collector-Base Voltage, max: -300 V
  • Emitter-Base Voltage, max: -3 V
  • Collector Current − Continuous, max: -0.5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 30 to 240
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-251
  • Electrically Similar to the Popular MJE350 transistor

Pinout of MJD350-1

Here is an image showing the pin diagram of this transistor.

Marking

The MJD350-1 transistor is marked as "J350".

Replacement and Equivalent for MJD350-1 transistor

You can replace the MJD350-1 with the MJD350-1G.

Lead-free Version

The MJD350-1G transistor is the lead-free version of the MJD350-1.
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